Datasheet > RQ1E075XN

RQ1E075XN

更新时间： 2024-09-15 09:44:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1240K
描述
4V Drive Nch MOSFET

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中文翻译

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RQ1E075XN 数据手册

Data Sheet

4V Drive Nch MOSFET

RQ1E075XN

 Structure

 Dimensions (Unit : mm)

TSMT8

Silicon N-channel MOSFET

(8) (7) (6) (5)

Features

1) Low on-resistance.

(1) (2) (3) (4)

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TSMT8).

Abbreviated symbol : XR

 Application

Switching

 Packaging specifications

 Inner circuit

(8)

(7)

(6)

(5)

Package

Taping

TCR

3000

○

Type

Code

Basic ordering unit (pieces)

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6) Drain

(7) Drain

(8) Drain

RQ1E075XN

∗2

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

(1)

(2)

(3)

(4)

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

7.5

Drain current

I_DP

30

Continuous

Pulsed

I_S

1.25

Source current

(Body Diode)

I_SP

Power dissipation

P_D

1.5

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to 150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

83.3

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2011.04 - Rev.A

1/6

12 3 4 5 6 7

中文翻译

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