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RP1E125XNTR PDF预览

RP1E125XNTR

更新时间: 2024-11-10 21:18:43
品牌 Logo 应用领域
罗姆 - ROHM 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 497K
描述
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN

RP1E125XNTR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F4
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):12.5 A
最大漏极电流 (ID):12.5 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F4
JESD-609代码:e2元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):36 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

RP1E125XNTR 数据手册

 浏览型号RP1E125XNTR的Datasheet PDF文件第2页浏览型号RP1E125XNTR的Datasheet PDF文件第3页浏览型号RP1E125XNTR的Datasheet PDF文件第4页浏览型号RP1E125XNTR的Datasheet PDF文件第5页浏览型号RP1E125XNTR的Datasheet PDF文件第6页浏览型号RP1E125XNTR的Datasheet PDF文件第7页 
Data Sheet  
4V Drive Nch MOSFET  
RP1E125XN  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
MPT6  
(Single)  
(6)  
(1)  
(5)  
(2)  
(4)  
(3)  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (MPT6).  
Application  
Switching  
Packaging specifications  
Inner circuit  
Package  
Taping  
TR  
(6)  
(5)  
(4)  
Type  
Code  
Basic ordering unit (pieces)  
1000  
RP1E125XN  
2  
(1) Source  
(2) Source  
(3) Gate  
1  
(4) Drain  
(5) Drain  
(6) Drain  
Absolute maximum ratings (Ta = 25C)  
Parameter  
(1)  
(2)  
(3)  
Symbol  
VDSS  
VGSS  
ID  
Limits  
30  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Drain-source voltage  
Gate-source voltage  
20  
V
Continuous  
12.5  
36  
A
Drain current  
Pulsed  
*1  
IDP  
A
Continuous  
Pulsed  
IS  
1.6  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
36  
A
Power dissipation  
PD  
2.0  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
62.5  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.04 - Rev.A  
1/6  

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