Datasheet > RP1-H-4.5V

RP1-H-4.5V

更新时间： 2024-11-18 02:54:27

品牌	Logo	应用领域
NAIS		继电器
页数	文件大小	规格书
4页	80K
描述
LOW PROFILE HIGH FREQUENCY RELAY

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中文翻译

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数据手册

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RP1-H-4.5V 数据手册

LOW PROFILE HIGH

FREQUENCY RELAY

RP-RELAYS

• High frequency relay with the low profile of 4 mm .157 inch

• Excellent high frequency characteristics

Isolation: Min. 10dB (at 1.8 GHz)

10.6

.417

.748

Insertion loss: Max. 1.0dB (at 1.8 GHz)

V.S.W.R.: Max. 1.3 (at 1.8 GHz)

.157

• High sensitivity in small size

Size: 10.6 × 9 × 4 mm .417 × .354 × .157 inch

Nominal operating power: 140 mW

mm inch

SPECIFICATIONS

Contact

Characteristics

Arrangement

1 Form C

Max. operating speed (at rated load)

Initial insulation resistance*¹

20 cpm

Min. 1,000 MΩ at 500 V DC

750 Vrms for 1 min.

1,500 Vrms for 1 min.

Silver alloy

Movable

Contact material

Stationary

Initial breakdown Between open contacts

Gold-clad silver

voltage

Between contacts and coil

Initial contact resistance, max.

(By voltage drop 6 V DC 0.1 A)

50 mΩ

Max. 3 ms

(Approx. 1.5 ms)

Operate time*³(at nominal voltage)

0.1 A 30 V DC

Nominal switch-

ing capacity

Contact switching power: 1 W

(Max. 1.8 GHz); Contact carrying

power: 3 W (Max. 1.2 GHz)

1 W (Max. 1.8 GHz)

Release time(without diode)*³

(at nominal voltage)

Max. 2 ms

(Approx. 1 ms)

Rating

Max. 50°Cwith nominal coil

voltage across coil and at

nominal switching capacity

Temperature rise

Min. 15 dB (at 1 GHz)

Min. 10 dB (at 1.8 GHz)

Isolation

Functional*⁴

Destructive*⁵

Min. 500 m/s²{50 G}

High frequency

characteristics

Max. 0.5 dB (at 1 GHz)

Max. 1 dB (at 1.8 GHz)

Shock resistance

Insertion loss

V.S.W.R.

Min. 1,000 m/s²{100 G}

(Impedance 50Ω)

Max. 1.2 (at 1 GHz)

Max. 1.3 (at 1.8 GHz)

10 to 55 Hz

at double amplitude of 3 mm

Functional*⁶

Vibration

resistance

10 to 55 Hz

at double amplitude of 5 mm

Mechanical

(at 180 cpm)

5×10⁶

Destructive

Expected life

(min. opera-

tions)

10⁵(0.1 A 30 V DC)

10⁵(1 W at 1.8 GHz;

V.S.W.R.: max. 1.3)

–40°C to 70°C

–40°F to 158°F

Conditions for operation,

transport and storage

(Not freezing and condensing

at low temperature)

Electrical

(at 20 cpm)

Ambient temp.

Humidity

5 to 85% R.H.

Coil (at 25°C, 68°F)

Voltage type

Approx. 1 g .04 oz

Unit weight

Nominal operating power

140 mW

Remarks

1.5 to 12 V DC

24 V DC

* Specifications will vary with foreign standards certification ratings.

*¹Measurement at same location as “Initial breakdown voltage” section

*²Detection current: 10mA

270 mW

*³Excluding contact bounce time

*⁴Half-wave pulse of sine wave: 11ms, detection time: 10µs

*⁵Half-wave pulse of sine wave: 6ms

*⁶Detection time: 10µs

ORDERING INFORMATION

TYPICAL APPLICATIONS

• Antenna switching of mobile phone

• Switching signal of measuring equipment

Ex. RP

Contact arrangement

1:1 Form C

Terminal shape

Coil voltage (DC)

Nil: Standard PC board terminal

H: Self-clinching terminal

1.5, 3, 4.5, 5, 6, 9, 12, 24 V

Note: Standard packing; Carton: 50 pcs. Case 1,000 pcs.

12 3 4

中文翻译

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与RP1-H-4.5V相关器件

型号	品牌	获取价格	描述	数据表
RP1-H-5V	NAIS	获取价格	LOW PROFILE HIGH FREQUENCY RELAY
RP1-H-6V	NAIS	获取价格	LOW PROFILE HIGH FREQUENCY RELAY
RP1-H-9V	NAIS	获取价格	LOW PROFILE HIGH FREQUENCY RELAY
RP1HV	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HV3	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HVO	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HW	SANKEN	获取价格	暂无描述
RP1HWK	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HWS	SANKEN	获取价格	Rectifier Diode, 1 Element, 0.1A, Silicon
RP1L080SN	ROHM	获取价格	4V Drive Nch MOSFET

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