5秒后页面跳转
RP1-H-6V PDF预览

RP1-H-6V

更新时间: 2024-11-10 02:54:27
品牌 Logo 应用领域
NAIS 继电器
页数 文件大小 规格书
4页 80K
描述
LOW PROFILE HIGH FREQUENCY RELAY

RP1-H-6V 数据手册

 浏览型号RP1-H-6V的Datasheet PDF文件第2页浏览型号RP1-H-6V的Datasheet PDF文件第3页浏览型号RP1-H-6V的Datasheet PDF文件第4页 
LOW PROFILE HIGH  
FREQUENCY RELAY  
RP-RELAYS  
• High frequency relay with the low profile of 4 mm .157 inch  
• Excellent high frequency characteristics  
Isolation: Min. 10dB (at 1.8 GHz)  
10.6  
.417  
9
.748  
Insertion loss: Max. 1.0dB (at 1.8 GHz)  
V.S.W.R.: Max. 1.3 (at 1.8 GHz)  
4
.157  
• High sensitivity in small size  
Size: 10.6 × 9 × 4 mm .417 × .354 × .157 inch  
Nominal operating power: 140 mW  
mm inch  
SPECIFICATIONS  
Contact  
Characteristics  
Arrangement  
1 Form C  
Max. operating speed (at rated load)  
Initial insulation resistance*1  
20 cpm  
Min. 1,000 Mat 500 V DC  
750 Vrms for 1 min.  
1,500 Vrms for 1 min.  
Silver alloy  
Movable  
Contact material  
Stationary  
Initial breakdown Between open contacts  
Gold-clad silver  
2
voltage  
*
Between contacts and coil  
Initial contact resistance, max.  
(By voltage drop 6 V DC 0.1 A)  
50 mΩ  
Max. 3 ms  
(Approx. 1.5 ms)  
Operate time*3 (at nominal voltage)  
0.1 A 30 V DC  
Nominal switch-  
ing capacity  
Contact switching power: 1 W  
(Max. 1.8 GHz); Contact carrying  
power: 3 W (Max. 1.2 GHz)  
1 W (Max. 1.8 GHz)  
Release time(without diode)*3  
(at nominal voltage)  
Max. 2 ms  
(Approx. 1 ms)  
Rating  
Max. 50°Cwith nominal coil  
voltage across coil and at  
nominal switching capacity  
Temperature rise  
Min. 15 dB (at 1 GHz)  
Min. 10 dB (at 1.8 GHz)  
Isolation  
Functional*4  
Destructive*5  
Min. 500 m/s2 {50 G}  
High frequency  
characteristics  
Max. 0.5 dB (at 1 GHz)  
Max. 1 dB (at 1.8 GHz)  
Shock resistance  
Insertion loss  
V.S.W.R.  
Min. 1,000 m/s2 {100 G}  
(Impedance 50)  
Max. 1.2 (at 1 GHz)  
Max. 1.3 (at 1.8 GHz)  
10 to 55 Hz  
at double amplitude of 3 mm  
Functional*6  
Vibration  
resistance  
10 to 55 Hz  
at double amplitude of 5 mm  
Mechanical  
(at 180 cpm)  
5×106  
Destructive  
Expected life  
(min. opera-  
tions)  
105 (0.1 A 30 V DC)  
105 (1 W at 1.8 GHz;  
V.S.W.R.: max. 1.3)  
–40°C to 70°C  
–40°F to 158°F  
Conditions for operation,  
transport and storage  
(Not freezing and condensing  
at low temperature)  
Electrical  
(at 20 cpm)  
Ambient temp.  
Humidity  
5 to 85% R.H.  
Coil (at 25°C, 68°F)  
Voltage type  
Approx. 1 g .04 oz  
Unit weight  
Nominal operating power  
140 mW  
Remarks  
1.5 to 12 V DC  
24 V DC  
* Specifications will vary with foreign standards certification ratings.  
*1 Measurement at same location as “Initial breakdown voltage” section  
*2 Detection current: 10mA  
270 mW  
*3 Excluding contact bounce time  
*4 Half-wave pulse of sine wave: 11ms, detection time: 10µs  
*5 Half-wave pulse of sine wave: 6ms  
*6 Detection time: 10µs  
ORDERING INFORMATION  
TYPICAL APPLICATIONS  
• Antenna switching of mobile phone  
• Switching signal of measuring equipment  
Ex. RP  
1
H
3V  
Contact arrangement  
1:1 Form C  
Terminal shape  
Coil voltage (DC)  
Nil: Standard PC board terminal  
H: Self-clinching terminal  
1.5, 3, 4.5, 5, 6, 9, 12, 24 V  
Note: Standard packing; Carton: 50 pcs. Case 1,000 pcs.  
93  

与RP1-H-6V相关器件

型号 品牌 获取价格 描述 数据表
RP1-H-9V NAIS

获取价格

LOW PROFILE HIGH FREQUENCY RELAY
RP1HV SANKEN

获取价格

Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HV3 SANKEN

获取价格

Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HVO SANKEN

获取价格

Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HW SANKEN

获取价格

暂无描述
RP1HWK SANKEN

获取价格

Rectifier Diode, 1 Element, 0.1A, Silicon
RP1HWS SANKEN

获取价格

Rectifier Diode, 1 Element, 0.1A, Silicon
RP1L080SN ROHM

获取价格

4V Drive Nch MOSFET
RP1P5 RECOM

获取价格

1.5 Watt DIP24 & SMD, Single & Dual Output
RP1P5-0505DA RECOM

获取价格

1.5 Watt DIP24 & SMD, Single & Dual Output