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RP1L080SN PDF预览

RP1L080SN

更新时间: 2024-11-18 09:44:55
品牌 Logo 应用领域
罗姆 - ROHM 驱动
页数 文件大小 规格书
7页 1184K
描述
4V Drive Nch MOSFET

RP1L080SN 数据手册

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Data Sheet  
4V Drive Nch MOSFET  
RP1L080SN  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
MPT6  
(Single)  
(6)  
(1)  
(5)  
(2)  
(4)  
(3)  
Features  
1) Low on-resistance.  
2) Fast switching speed.  
3) Drive circuits can be simple.  
4) Parallel use is easy.  
Application  
Switching  
Packaging specifications  
Inner circuit  
(6)  
(5)  
(4)  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
1000  
RP1L080SN  
2  
1  
(1) Source  
(2) Source  
(3) Gate  
(4) Drain  
(5) Drain  
(6) Drain  
(1)  
(2)  
(3)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Limits  
60  
Unit  
V
Drain-source voltage  
Gate-source voltage  
20  
V
Continuous  
8.0  
32  
1.6  
A
Drain current  
Pulsed  
*1  
IDP  
IS  
A
Continuous  
Pulsed  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
PD  
Tch  
Tstg  
32  
A
Power dissipation  
2.0  
W
C  
C  
Channel temperature  
150  
Range of storage temperature  
55to150  
*1 Pw10s, Duty cycle1%  
*2 Mounted on a ceramic board  
Thermal resistance  
Parameter  
Symbol  
Limits  
62.5  
Unit  
*
Channel to Ambient  
* Mounted on a ceramic board  
Rth (ch-a)  
C / W  
www.rohm.com  
2011.08 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/6  

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