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RO3113

更新时间: 2024-11-22 01:26:11
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村田 - MURATA /
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2页 142K
描述
314.5 MHz SAW Resonator

RO3113 数据手册

 浏览型号RO3113的Datasheet PDF文件第2页 
RO3113  
• Ideal for LO in 315 MHz Superhet Receivers with 500 kHz IF  
• Very Low Series Resistance  
• Quartz Stability  
314.5 MHz  
SAW  
• Rugged, Hermetic, Low-Profile TO39 Case  
• Complies with Directive 2002/95/EC (RoHS)  
Pb  
Resonator  
The RO3113 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It provides  
reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating at  
approximately 314.5 MHz. The RO3113 is designed for IC based 315 MHz superhet receivers using a  
500 kHz IF (Philips UAA3201T). Applications include wireless remote-control and security devices operating  
in the USA under FCC Part 15 and in Canada under DoC RSS-210.  
Absolute Maximum Ratings  
Rating  
Value  
+0  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation (See: Typical Test Circuit)  
DC Voltage Between Any Two Pins  
Case Temperature  
(Observe ESD Precautions)  
±30  
-40 to +85  
TO39-3 Case  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
Minimum  
Typical  
Maximum  
Units  
Center Frequency (+25 °C)  
Absolute Frequency  
f
314.425  
314.575  
MHz  
kHz  
dB  
C
2, 3, 4, 5  
Tolerance from 314.500 MHz  
Δf  
±75  
1.5  
C
Insertion Loss  
Quality Factor  
IL  
1.0  
13000  
1200  
25  
2, 5, 6  
5, 6, 7  
Unloaded Q  
Q
U
50 Ω Loaded Q  
Q
L
Temperature Stability  
Turnover Temperature  
Turnover Frequency  
T
f
10  
40  
°C  
O
f
6, 7, 8  
O
c
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
0.037  
ppm/°C  
Frequency Aging  
|f |  
≤10  
ppm/yr  
MΩ  
Ω
1
5
A
DC Insulation Resistance between Any Two Pins  
1.0  
RF Equivalent RLC Model  
Motional Resistance  
R
10  
70  
M
Motional Inductance  
L
µH  
fF  
5, 7, 9  
M
Motional Capacitance  
C
3.7  
2.9  
2.9  
88  
M
Pin 1 to Pin 2 Static Capacitance  
Transducer Static Capacitance  
C
5, 6, 9  
5, 6, 7, 9  
2, 7  
pF  
O
C
pF  
P
Test Fixture Shunt Inductance  
L
TEST  
nH  
Lid Symbolization (in Addition to Lot and/or Date Codes)  
RFM RO3113  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1.  
2.  
Frequency aging is the change in f with time and is specified at +65°C or  
C
subject to change without notice.  
7.  
8.  
Derived mathematically from one or more of the following directly  
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .  
less. Aging may exceed the specification for prolonged temperatures  
above +65°C. Typically, aging is greatest the first year after manufacture,  
decreasing significantly in subsequent years.  
C
C
C
O
Turnover temperature, T , is the temperature of maximum (or turnover)  
O
The center frequency, f , is measured at the minimum insertion loss point,  
frequency, f . The nominal frequency at any case temperature, T , may be  
C
O
C
IL , with the resonator in the 50 Ω test system (VSWR 1.2:1). The  
2
MIN  
calculated from: f = f [1 - FTC (T -T ) ]. Typically, oscillator T is 20°C  
O
O
C
O
shunt inductance, L  
, is tuned for parallel resonance with C at f .  
TEST  
O C  
less than the specified resonator T .  
This equivalent RLC model approximates resonator performance near the  
resonant frequency and is provided for reference only. The capacitance C  
O
Typically, f  
or f  
is less than the resonator f .  
TRANSMITTER C  
OSCILLATOR  
9.  
3.  
4.  
One or more of the following United States patents apply: 4,454,488 and  
4,616,197 and others pending.  
O
is the static (nonmotional) capacitance between pin1 and pin 2 measured  
at low frequency (10 MHz) with a capacitance meter. The measurement  
includes case parasitic capacitance with a floating case. For usual  
grounded case applications (with ground connected to either pin 1 or pin 2  
Typically, equipment designs utilizing this device require emissions testing  
and government approval, which is the responsibility of the equipment  
manufacturer.  
5.  
6.  
Unless noted otherwise, case temperature T = +25°C±2°C.  
C
and to the case), add approximately 0.25 pF to C .  
O
The design, manufacturing process, and specifications of this device are  
www.RFM.com  
E-mail: info@rfm.com  
Page 1 of 2  
©2008 by RF Monolithics, Inc.  
RO3113 - 3/27/08  

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