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RO3134A

更新时间： 2024-09-30 19:38:55
品牌 Logo 应用领域
村田 - MURATA 晶体谐振器
页数 文件大小 规格书
2页 66K
描述
1-PORT SAW RESONATOR, 372.5 MHz, ROHS COMPLIANT, CERAMIC, CASE SM5035-4

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RO3134A 技术参数

生命周期：Obsolete包装说明：ROHS COMPLIANT, CERAMIC, CASE SM5035-4
Reach Compliance Code：unknown风险等级：5.84
晶体/谐振器类型：1-PORT频率容差 (MHz)：0.1
插入损耗：2.2 dB安装特点：SURFACE MOUNT
标称工作频率：372.5 MHz并联电容：2.35 pF
物理尺寸：L5.13XB3.63XH1.6 (mm)/L0.202XB0.143XH0.063 (inch)表面贴装：YES
Base Number Matches：1

RO3134A 数据手册

 浏览型号RO3134A的Datasheet PDF文件第2页 
RO3134A  
• Very Low Series Resistance  
• Quartz Stability  
• Surface-Mount, Ceramic Case with 21 mm2 Footprint  
• Complies with Directive 2002/95/EC (RoHS)  
372.5 MHz  
SAW  
Pb  
The RO3134A is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case.  
It provides reliable, fundamental-mode, quartz frequency stabilization of local oscillators operating at  
approximately 372.5 MHz.  
Resonator  
Absolute Maximum Ratings  
Rating  
Value  
+10  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation (See Typical Test Circuit)  
DC Voltage Between Terminals (Observe ESD Precautions)  
Case Temperature  
±30  
-40 to +85  
260  
Soldering Temperature (10 seconds / 5 cycles maximum)  
°C  
SM5035-4  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
Minimum  
Typical  
Maximum  
Units  
f
Frequency (+25 °C)  
Nominal Frequency  
372.400  
372.600  
MHz  
kHz  
dB  
C
2, 3, 4, 5  
∆f  
Tolerance from 372.500 MHz  
±100  
2.2  
C
Insertion Loss  
Quality Factor  
IL  
2, 5, 6  
5, 6, 7  
1.0  
15,400  
1,700  
25  
Q
Unloaded Q  
U
Q
T
50 Ω Loaded Q  
L
Temperature Stability  
Turnover Temperature  
Turnover Frequency  
10  
40  
°C  
O
f
f
6, 7, 8  
O
C
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
0.032  
10  
ppm/°C  
|f |  
Frequency Aging  
1, 6  
5
ppm/yr  
MΩ  
Ω
A
DC Insulation Resistance between Any Two Terminals  
1.0  
R
RF Equivalent RLC Model  
Motional Resistance  
Motional Inductance  
Motional Capacitance  
Shunt Static Capacitance  
12.7  
83  
M
L
5, 6, 7, 9  
µH  
M
C
2.2  
2.4  
76  
fF  
M
C
5, 6, 9  
2, 7  
pF  
O
L
Test Fixture Shunt Inductance  
Lid Symbolization  
nH  
TEST  
836//YYWWSR  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1. Frequency aging is the change in f with time and is specified at  
are subject to change without notice.  
C
7. Derived mathematically from one or more of the following directly  
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .  
+65°C or less. Aging may exceed the specification for prolonged tem-  
peratures above +65°C. Typically, aging is greatest the first year after  
manufacture, decreasing in subsequent years.  
C
C
C
O
8. Turnover temperature, T , is the temperature of maximum (or  
O
2. The center frequency, f , is measured at the minimum insertion loss  
C
turnover) frequency, f . The nominal frequency at any case  
O
point, IL , with the resonator in the 50 Ω test system (VSWR ≤  
MIN  
2
temperature, T , may be calculated from: f = f [1 - FTC (T -T ) ].  
C
O
O
C
1.2:1). The shunt inductance, L  
, is tuned for parallel resonance  
TEST  
Typically oscillator T is approximately equal to the specified  
O
with C at f . Typically, f  
or f  
is approximately  
O
C
OSCILLATOR  
TRANSMITTER  
resonator T .  
O
equal to the resonator f .  
C
9. This equivalent RLC model approximates resonator performance near  
the resonant frequency and is provided for reference only. The  
3. One or more of the following United States patents apply: 4,454,488  
and 4,616,197.  
4. Typically, equipment utilizing this device requires emissions testing  
and government approval, which is the responsibility of the equipment  
manufacturer.  
capacitance C is the static (nonmotional) capacitance between the  
O
two terminals measured at low frequency (10 MHz) with a capacitance  
meter. The measurement includes parasitic capacitance with "NC”  
pads unconnected. Case parasitic capacitance is approximately  
0.05 pF. Transducer parallel capacitance can by calculated as:  
5. Unless noted otherwise, case temperature T = +25°C±2°C.  
C
6. The design, manufacturing process, and specifications of this device  
C
≈ C - 0.05 pF.  
P
O
www.RFM.com E-mail: info@rfm.com  
©2008 by RF Monolithics, Inc.  
Page 1 of 2  
RO3134A - 12/4/08  
12

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