RO3118
• Designed for 318 MHz Transmitter Applications
• Low Series Resistance
• Quartz Stability
• Rugged, Hermetic, Low-Profile TO39 Case
• Complies with Directive 2002/95/EC (RoHS)
318.00 MHz
SAW
Pb
Resonator
The RO3118 is a true one-port, surface-acoustic-wave (SAW) resonator in a low-profile TO39 case. It provides
reliable, fundamental-mode quartz frequency stabilization of fixed-frequency transmitters operating at or near
318 MHz.
Absolute Maximum Ratings
Rating
Value
+0
Units
dBm
VDC
°C
CW RF Power Dissipation
DC Voltage Between Terminals (Observe ESD Precautions)
Case Temperature
±30
-40 to +85
260
Soldering Temperature (10 seconds / 5 cycles max.
°C
TO39-3 Case
Electrical Characteristics
Characteristic
Sym
Notes
Minimum
Typical
Maximum
Units
f
Frequency (+25 °C)
Nominal Frequency
317.925
318.075
MHz
kHz
dB
C
2, 3, 4, 5
Δf
Tolerance from 318.000 MHz
±75
2.0
C
Insertion Loss
Quality Factor
IL
2, 5, 6
5, 6, 7
1.5
10700
1400
25
Q
Unloaded Q
U
Q
T
50 Ω Loaded Q
L
Temperature Stability
Turnover Temperature
Turnover Frequency
10
40
°C
O
f
f +4.2
6, 7, 8
kHz
O
C
2
Frequency Temperature Coefficient
Absolute Value during the First Year
FTC
|fA|
0.037
10
ppm/°C
Frequency Aging
1, 6
5
ppm/yr
MΩ
Ω
DC Insulation Resistance between Any Two Pins
1.0
R
RF Equivalent RLC Model
Motional Resistance
15
80
M
L
Motional Inductance
5, 6, 7, 9
µH
M
C
Motional Capacitance
3.1
2.6
3.0
96
fF
M
C
Pin 1 to Pin 2 Static Capacitance
Transducer Static Capacitance
5, 6, 9
5, 6, 7, 9
2, 7
pF
pF
nH
O
C
P
LTEST
Test Fixture Shunt Inductance
Lid Symbolization (in addition to Lot and/or Date Codes)
RFM // RO3118
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
2.
Frequency aging is the change in f with time and is specified at +65°C or
C
6.
7.
The design, manufacturing process, and specifications of this device are
subject to change without notice.
less. Aging may exceed the specification for prolonged temperatures
above +65°C. Typically, aging is greatest the first year after manufacture,
decreasing significantly in subsequent years.
Derived mathematically from one or more of the following directly
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .
C
C
C
O
The center frequency, f , is measured at the minimum insertion loss point,
8.
Turnover temperature, T , is the temperature of maximum (or turnover)
C
O
IL , with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The
frequency, f . The nominal frequency at any case temperature, T , may be
MIN
O
C
2
shunt inductance, L
, is tuned for parallel resonance with C at f .
TEST
O C
calculated from: f = f [1 - FTC (T -T ) ]. Typically, oscillator T is 20°C
O O C O
Typically, f
or f
is less than the resonator f .
TRANSMITTER C
OSCILLATOR
less than the specified resonator T .
O
3.
4.
One or more of the following United States patents apply: 4,454,488 and
4,616,197 and others pending.
9.
This equivalent RLC model approximates resonator performance near the
resonant frequency and is provided for reference only. The capacitance C
O
Typically, equipment designs utilizing this device require emissions testing
and government approval, which is the responsibility of the equipment
manufacturer.
is the static (nonmotional) capacitance between pin1 and pin 2 measured
at low frequency (10 MHz) with a capacitance meter. The measurement
includes case parasitic capacitance with a floating case. For usual
grounded case applications (with ground connected to either pin 1 or pin 2
5.
Unless noted otherwise, case temperature T = +25°C±2°C.
C
and to the case), add approximately 0.25 pF to C .
O
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©2008 by RF Monolithics, Inc.
RO3118 - 3/27/08