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RO3132A

更新时间： 2024-01-17 15:03:07
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村田 - MURATA /
页数 文件大小 规格书
2页 392K
描述
312.0 MHz SAW Resonator

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RO3132A 数据手册

 浏览型号RO3132A的Datasheet PDF文件第2页 
RO3132A  
• Designed for 312.0 MHz Transmitters  
• Very Low Series Resistance  
• Quartz Stability  
• Surface-mount Ceramic Case  
• Complies with Directive 2002/95/EC (RoHS)  
312.0 MHz  
SAW  
Pb  
The RO3132A is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case.  
It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters  
operating at 312.0 MHz. This SAW is designed specifically for remote-control and wireless security  
transmitters.  
Resonator  
Absolute Maximum Ratings  
Rating  
Value  
+0  
Units  
dBm  
VDC  
°C  
CW RF Power Dissipation (See: Typical Test Circuit)  
DC Voltage Between Terminals (Observe ESD Precautions)  
Case Temperature  
±30  
-40 to +85  
260  
Soldering Temperature (10 seconds / 5 cycles maximum)  
°C  
SM5035-4  
Electrical Characteristics  
Characteristic  
Sym  
Notes  
2,3,4,5  
2,5,6  
Minimum  
Typical  
Maximum  
312.075  
±75  
Units  
f
Center Frequency, +25 °C  
Absolute Frequency  
311.925  
MHz  
kHz  
dB  
C
∆f  
Tolerance from 312.0 MHz  
C
Insertion Loss  
Quality Factor  
IL  
1.4  
13500  
2000  
25  
2.2  
Q
Unloaded Q  
U
5,6,7  
Q
T
50 Ω Loaded Q  
L
Temperature Stability  
Turnover Temperature  
Turnover Frequency  
10  
40  
°C  
O
f
f
6,7,8  
O
C
2
Frequency Temperature Coefficient  
Absolute Value during the First Year  
FTC  
0.032  
ppm/°C  
|f |  
Frequency Aging  
1
5
≤10  
ppm/yr  
MΩ  
Ω
A
DC Insulation Resistance between Any Two Terminals  
1.0  
R
RF Equivalent RLC Model  
Motional Resistance  
Motional Inductance  
Motional Capacitance  
Shunt Static Capacitance  
17.4  
120  
2.2  
M
L
5, 7, 9  
µH  
M
C
fF  
M
C
5, 6, 9  
2, 7  
.74  
pF  
O
L
Test Fixture Shunt Inductance  
351  
nH  
TEST  
Lid Symbolization (in addition to Lot and/or Date Codes)  
794 // YWWS  
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.  
Notes:  
1.  
2.  
Frequency aging is the change in f with time and is specified at +65 °C or  
C
7.  
8.  
Derived mathematically from one or more of the following directly  
measured parameters: f , IL, 3 dB bandwidth, f versus T , and C .  
less. Aging may exceed the specification for prolonged temperatures  
above +65 °C. Typically, aging is greatest the first year after manufacture,  
decreasing in subsequent years.  
C
C
C
O
Turnover temperature, T , is the temperature of maximum (or turnover)  
O
frequency, f . The nominal frequency at any case temperature, T , may be  
O
C
The center frequency, f , is measured at the minimum insertion loss point,  
C
2
calculated from: f = f [1 - FTC (T -T ) ]. Typically oscillator T is  
O
O
C
O
IL , with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The  
MIN  
approximately equal to the specified resonator T .  
O
shunt inductance, L  
, is tuned for parallel resonance with C at f .  
TEST  
O C  
9.  
This equivalent RLC model approximates resonator performance near the  
resonant frequency and is provided for reference only. The capacitance C  
is the static (nonmotional) capacitance between the two terminals  
measured at low frequency (10 MHz) with a capacitance meter. The  
Typically, f  
or f  
is approximately equal to the  
TRANSMITTER  
OSCILLATOR  
O
resonator f .  
C
3.  
4.  
One or more of the following United States patents apply: 4,454,488 and  
4,616,197.  
measurement includes parasitic capacitance with "NC” pads unconnected.  
Case parasitic capacitance is approximately 0.05 pF. Transducer parallel  
capacitance can by calculated as: C ≈ C - 0.05 pF.  
Typically, equipment utilizing this device requires emissions testing and  
government approval, which is the responsibility of the equipment  
manufacturer.  
P
O
10. Tape and Reel standard per ANSI / EIA 481.  
5.  
6.  
Unless noted otherwise, case temperature T = +25 ± 2 °C.  
C
The design, manufacturing process, and specifications of this device are  
subject to change without notice.  
www.RFM.com E-mail: info@rfm.com  
© 2008-2011 by RF Monolithics, Inc.  
Page 1 of 2  
RO3132A - 6/24/11  
12

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