Datasheet > RN4988FE(TPL3,F)

RN4988FE(TPL3,F)

更新时间： 2024-11-17 09:28:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	279K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

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RN4988FE(TPL3,F) 数据手册

RN4988FE

TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type

(PCT Process) (Bias Resistor Built-in Transistor)

RN4988FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

R1: 22 kΩ

TOSHIBA

2-2N1G

R2: 47 kΩ

Weight: 0.003 g (typ.)

(Q1, Q2 common)

Marking

Equivalent Circuit (top view)

6 I

2007-11-01

12 3 4 5 6

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