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RN4987FE PDF预览

RN4987FE

更新时间: 2024-11-15 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 88K
描述
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type

RN4987FE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.46
Is Samacsys:N其他特性:BUILT IN BIAS RESISTANCE RATIO IS 4.7
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

RN4987FE 数据手册

 浏览型号RN4987FE的Datasheet PDF文件第2页浏览型号RN4987FE的Datasheet PDF文件第3页浏览型号RN4987FE的Datasheet PDF文件第4页 
RN4987FE  
TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type  
(PCT process) (Bias Resistor built-in Transistor)  
RN4987FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications.  
·
·
Two devices are incorporated into an Extreme-Super-Mini (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Equivalent Circuit and Bias Resistor Values  
Q1  
Q2  
C
E
C
E
R1  
R1  
B
B
JEDEC  
JEITA  
R1: 10 kW  
TOSHIBA  
Weight:  
R2: 47 kW  
g (typ.)  
(Q1, Q2 common)  
Marking  
Equivalent Circuit (top view)  
6
5
4
6 H  
Q2  
3
Q1  
1
2
1
2002-01-16  

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