RN4988

更新时间： 2024-11-15 21:53:31

品牌	Logo	应用领域
东芝 - TOSHIBA		PC
页数	文件大小	规格书
6页	220K
描述
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

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中文翻译

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数据手册

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RN4988 数据手册

RN4988

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN4988

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

ꢀ Includeing two devices in US6 (ultra super mini type with 6 leads)

ꢀ With built-in bias resistors

ꢀ Simplify circuit design

ꢀ Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 22kΩ

R2: 47kΩ

(Q1, Q2 Common)

Q1 Maximum Ratings (Ta = 25°C)

JEDEC

―

Characteristic

Collector-base voltage

Symbol

Rating

Unit

EIAJ

TOSHIBA

Weight: 6.8mg

2-2J1A

CBO

Collector-emitter voltage

Emitter-base voltage

Collector current

CEO

EBO

100

Q2 Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−7

Collector-emitter voltage

Emitter-base voltage

Collector current

−100

2001-06-07

12 3 4 5 6

中文翻译

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