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RN4988FE(TE85L,F) PDF预览

RN4988FE(TE85L,F)

更新时间: 2024-09-08 20:11:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 274K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN4988FE(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.8最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):80元件数量:2
极性/信道类型:NPN/PNP最大功率耗散 (Abs):0.1 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN4988FE(TE85L,F) 数据手册

 浏览型号RN4988FE(TE85L,F)的Datasheet PDF文件第2页浏览型号RN4988FE(TE85L,F)的Datasheet PDF文件第3页浏览型号RN4988FE(TE85L,F)的Datasheet PDF文件第4页浏览型号RN4988FE(TE85L,F)的Datasheet PDF文件第5页浏览型号RN4988FE(TE85L,F)的Datasheet PDF文件第6页 
RN4988FE  
TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type  
(PCT Process) (Bias Resistor Built-in Transistor)  
RN4988FE  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Equivalent Circuit and Bias Resistor Values  
Q1  
Q2  
C
C
R1  
R1  
B
B
JEDEC  
JEITA  
E
E
TOSHIBA  
2-2N1G  
R1: 22 kΩ  
Weight: 0.003 g (typ.)  
R2: 47 kΩ  
(Q1, Q2 common)  
Marking  
Equivalent Circuit (top view)  
6
5
2
4
6 I  
Q2  
3
Q1  
1
Start of commercial production  
2000-05  
1
2014-03-01  

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