是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.8 | 最大集电极电流 (IC): | 0.1 A |
最小直流电流增益 (hFE): | 80 | 元件数量: | 2 |
极性/信道类型: | NPN/PNP | 最大功率耗散 (Abs): | 0.1 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN4988FE(TPL3,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR |
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RN4988FE,LF(CT | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor |
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RN4988FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 22K x 47Kohms Polarity=NPN+PNP |
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RN4989 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) |
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RN4989(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, |
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RN4989FE | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPE |
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RN4989FE(T5LMAA,F) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon |
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RN4990 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) |
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RN4990(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP |
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RN4990(TE85R) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, |
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