Datasheet > RN4987(TE85L,F)

RN4987(TE85L,F)

更新时间： 2024-09-08 21:14:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	250K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

获取价格

技术参数
数据手册

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RN4987(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN4987(TE85L,F) 数据手册

RN4987

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

RN4987

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in US6 (ultra super mini type with 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 10kΩ

R2: 47kΩ

(Q1, Q2 Common)

Q1 Absolute Maximum Ratings (Ta = 25°C)

JEDEC

―

Characteristic

Collector-base voltage

Symbol

Rating

Unit

JEITA

TOSHIBA

2-2J1A

CBO

Weight: 6.8 mg (typ.)

Collector-emitter voltage

Emitter-base voltage

Collector current

CEO

EBO

100

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−6

Collector-emitter voltage

Emitter-base voltage

Collector current

−100

2007-11-01

12 3 4 5 6

中文翻译

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