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RN2706JE PDF预览

RN2706JE

更新时间: 2024-11-03 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
4页 105K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2706JE 数据手册

 浏览型号RN2706JE的Datasheet PDF文件第2页浏览型号RN2706JE的Datasheet PDF文件第3页浏览型号RN2706JE的Datasheet PDF文件第4页 
                                                        
                                                        
RN2701JE~RN2706JE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2701JE,RN2702JE,RN2703JE  
RN2704JE,RN2705JE,RN2706JE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications.  
·
·
Two devices are incorporated into an Extreme-Super-Mini (5 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more compact  
equipment and save assembly cost.  
Complementary to RN1701JE~RN1706JE  
·
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kW)  
R2 (kW)  
RN2701JE  
RN2702JE  
RN2703JE  
RN2704JE  
RN2705JE  
RN2706JE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
47  
JEDEC  
JEITA  
E
2.2  
4.7  
TOSHIBA  
Weight:  
g (typ.)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
-50  
-50  
-10  
-5  
V
V
CBO  
CEO  
RN2701JE~RN2706JE  
5
4
Collector-emitter voltage  
RN2701JE~RN2704JE  
RN2705JE, RN2706JE  
Q1  
Q2  
Emitter-base voltage  
V
V
EBO  
Collector current  
I
-100  
mA  
C
P
C
Collector power dissipation  
100  
mW  
(Note)  
1
2
3
RN2701JE~RN2706JE  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
-55~150  
stg  
Note: Total rating  
1
2002-01-24  

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