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RN2703,LF PDF预览

RN2703,LF

更新时间: 2024-09-12 19:59:59
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 470K
描述
Small Signal Bipolar Transistor

RN2703,LF 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownFactory Lead Time:12 weeks
风险等级:4.72Base Number Matches:1

RN2703,LF 数据手册

 浏览型号RN2703,LF的Datasheet PDF文件第2页浏览型号RN2703,LF的Datasheet PDF文件第3页浏览型号RN2703,LF的Datasheet PDF文件第4页浏览型号RN2703,LF的Datasheet PDF文件第5页浏览型号RN2703,LF的Datasheet PDF文件第6页浏览型号RN2703,LF的Datasheet PDF文件第7页 
RN2701~RN2706  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN2701, RN2702, RN2703  
RN2704, RN2705, RN2706  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in USV (ultra super mini type with 5 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN1701 to RN1706  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2701  
RN2702  
RN2703  
RN2704  
RN2705  
RN2706  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
USV  
JEDEC  
47  
JEITA  
2.2  
4.7  
TOSHIBA  
2-2L1A  
Weight: 6.2 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
10  
5  
V
V
CBO  
CEO  
RN2701 to 2706  
Collector-emitter voltage  
RN2701 to 2704  
RN2705, 2706  
Emitter-base voltage  
V
V
EBO  
Collector current  
I
100  
200  
150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
RN2701 to 2706  
T
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*
Total rating  
Start of commercial production  
1992-01  
1
2014-03-01  

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