Datasheet > RN2318(TE85L,F)

RN2318(TE85L,F)

更新时间： 2024-02-22 21:10:20

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	478K
描述
TRANSISTOR PNP 50V 0.1A SC-70

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中文翻译

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技术参数
数据手册

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RN2318(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	12 weeks
风险等级：	2.33	Base Number Matches：	1

RN2318(TE85L,F) 数据手册

RN2314~RN2318

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2314, RN2315, RN2316, RN2317, RN2318

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1314 to RN1318

Equivalent Circuit and Bias Resistor Values

Type No.

R (kΩ)

RN2314

RN2315

RN2316

RN2317

RN2318

4.7

2.2

4.7

JEDEC

―

JEITA

SC-70

2-2E1A

TOSHIBA

Weight: 0.006g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

RN2314 to 2318

Collector-emitter voltage

CEO

RN2314

RN2315

RN2316

RN2317

RN2318

−5

−6

Emitter-base voltage

−7

EBO

−15

−25

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2314 to 2318

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1999-01

2014-03-01

12 3 4 5 6 7 8

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