生命周期: | Obsolete | 零件包装代码: | SC-70 |
包装说明: | USM, 2-2E1A, SC-70, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2323A(TE85L) | TOSHIBA |
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RN2323A(TE85L) |
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RN232-4-02-3M3 | Schaffner |
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Current-compensated Chokes |
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RN2324A | TOSHIBA |
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Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An |
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RN2324A(TE85L) | TOSHIBA |
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RN2324A(TE85L) |
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RN2324A(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70 |
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RN2325A | TOSHIBA |
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Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An |
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RN2326A | TOSHIBA |
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Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An |
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RN2326A(TE85L) | TOSHIBA |
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RN2326A(TE85L) |
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RN2326A(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70 |
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RN2327A | TOSHIBA |
获取价格 |
Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An |
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