Datasheet > RN2401(T5LTST,F

RN2401(T5LTST,F

更新时间： 2024-01-08 10:32:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	902K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN2401(T5LTST,F 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

RN2401(T5LTST,F 数据手册

RN2401~RN2406

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2401, RN2402, RN2403

RN2404, RN2405, RN2406

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors

z Simplified circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1401 to 1406

Equivalent Circuit Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2401

RN2402

RN2403

RN2404

RN2405

RN2406

4.7

JEDEC

TO-236MOD

SC-59

2.2

4.7

JEITA

TOSHIBA

Weight:12mg (typ.)

2-3F1A

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

−10

−5

CBO

CEO

RN2401 to 2406

Collector-emitter voltage

RN2401 to 2404

RN2405, 2406

Emitter-base voltage

EBO

Collector current

−100

200

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2401 to 2406

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1983-06

2014-03-01

12 3 4 5 6 7 8

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