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RN2404(TE85L,F) PDF预览

RN2404(TE85L,F)

更新时间: 2024-11-24 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 902K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-23VAR

RN2404(TE85L,F) 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):80
元件数量:1极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

RN2404(TE85L,F) 数据手册

 浏览型号RN2404(TE85L,F)的Datasheet PDF文件第2页浏览型号RN2404(TE85L,F)的Datasheet PDF文件第3页浏览型号RN2404(TE85L,F)的Datasheet PDF文件第4页浏览型号RN2404(TE85L,F)的Datasheet PDF文件第5页浏览型号RN2404(TE85L,F)的Datasheet PDF文件第6页浏览型号RN2404(TE85L,F)的Datasheet PDF文件第7页 
RN2401~RN2406  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2401, RN2402, RN2403,  
RN2404, RN2405, RN2406  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors  
z Simplified circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN1401~1406  
Equivalent Circuit Bias Resistor Values  
C
Type No.  
R1 (k)  
R2 (k)  
R1  
RN2401  
RN2402  
RN2403  
RN2404  
RN2405  
RN2406  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
B
22  
47  
E
2.2  
4.7  
JEDEC  
TO-236MOD  
JEITA  
SC-59  
TOSHIBA  
Weight:12mg (typ.)  
2-3F1A  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
10  
5  
V
V
CBO  
CEO  
RN2401~2406  
Collector-emitter voltage  
RN2401~2404  
RN2405, 2406  
V
Emitter-base voltage  
V
EBO  
V
Collector current  
I
100  
200  
150  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2401~2406  
T
j
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2009-11-16  

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