Datasheet > RN2326A(TE85L,F)

RN2326A(TE85L,F)

更新时间： 2023-02-26 15:14:58

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	191K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70

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中文翻译

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数据手册

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RN2326A(TE85L,F) 数据手册

RN2321A∼RN2327A

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2321A,RN2322A,RN2323A,RN2324A

RN2325A,RN2326A,RN2327A

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit in mm

z High current driving is possible.

z Since bias resisters are built in the transistor, the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

z Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

z Complementary to RN1321A~RN1327A

z Low V

enable to be low power dissipation on high current driving.

CE(sat)

Equivalent Circuit And Bias Resistance Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2321A

RN2322A

RN2323A

RN2324A

RN2325A

RN2326A

RN2327A

2.2

4.7

1.BASE

2.EMITTER

3.COLLECTOR

2.2

4.7

JEDEC

JEITA

―

0.47

SC-70SCSC

2-2E1A

TOSHIBA

2.2

Weight: 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−15

−12

CBO

CEO

RN2321A~2327A

Collector-emitter voltage

Emitter-base voltage

RN2321A~2324A

RN2325A, 2326A

RN2327A

−10

−5

EBO

−6

Collector current

−500

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2321A~2327A

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7...11

中文翻译

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与RN2326A(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2327A	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An
RN2357	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SC-70
RN2401	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2401(T5L,PP,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2401(T5LTST,F	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2401(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN2401(TE85L,F)	TOSHIBA	获取价格	Trans Digital BJT PNP 50V 100mA 3-Pin S-Mini T/R
RN2401(TE85L2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp
RN2401(TE85R,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2401(TE85R2)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, 3 PIN, BIP General Purp

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