Datasheet > RN2322A

RN2322A

更新时间： 2024-01-02 17:24:06

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动 PC
页数	文件大小	规格书
11页	207K
描述
Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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技术参数
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RN2322A 技术参数

生命周期：	Obsolete	零件包装代码：	SC-70
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.84
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	12 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	65	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.1 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

RN2322A 数据手册

RN2321A∼RN2327A

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2321A,RN2322A,RN2323A,RN2324A

RN2325A,RN2326A,RN2327A

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit in mm

z High current driving is possible.

z Since bias resisters are built in the transistor, the miniaturization of the

apparatus by curtailment of the number of parts and laborsaving of an

assembly are possible.

z Many kinds of resistance value are lined up in order to support various

kinds of circuit design.

z Complementary to RN1321A~RN1327A

z Low V

enable to be low power dissipation on high current driving.

CE(sat)

Equivalent Circuit And Bias Resistance Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

2.EMITTER

3.COLLECTOR

RN2321A

RN2322A

RN2323A

RN2324A

RN2325A

RN2326A

RN2327A

2.2

4.7

2.2

4.7

JEDEC

JEITA

―

SC-70

2-2E1A

0.47

TOSHIBA

Weight: 0.006 g (typ.)

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−15

−12

CBO

CEO

RN2321A~2327A

Collector-emitter voltage

Emitter-base voltage

RN2321A~2324A

RN2325A, 2326A

RN2327A

−10

−5

EBO

−6

Collector current

−500

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2321A~2327A

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7...11

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与RN2322A相关器件

型号	品牌	获取价格	描述	数据表
RN2322A(TE85L)	TOSHIBA	获取价格	RN2322A(TE85L)
RN2322A(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70
RN2323A	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An
RN2323A(TE85L)	TOSHIBA	获取价格	RN2323A(TE85L)
RN232-4-02-3M3	Schaffner	获取价格	Current-compensated Chokes
RN2324A	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An
RN2324A(TE85L)	TOSHIBA	获取价格	RN2324A(TE85L)
RN2324A(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,12V V(BR)CEO,500MA I(C),SC-70
RN2325A	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An
RN2326A	TOSHIBA	获取价格	Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit An

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