Datasheet > RN2102CT(TPL3)

RN2102CT(TPL3)

更新时间： 2024-11-16 21:13:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	197K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883

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中文翻译

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技术参数
数据手册

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RN2102CT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.05 A	最小直流电流增益 (hFE)：	60
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.05 W	子类别：	BIP General Purpose Small Signals
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2102CT(TPL3) 数据手册

RN2101CT ~ RN2106CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101CT, RN2102CT, RN2103CT

RN2104CT, RN2105CT, RN2106CT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

Complementary to RN1101CT to RN1106CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

4.7

2.EMITTER

3.COLLECOTR

CST3

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

RN2101CT to 2106CT

Collector-emitter voltage

−20

−10

−5

CBO

CEO

RN2101CT to 2104CT

Emitter-base voltage

EBO

RN2105CT, 2106CT

Collector current

−50

°C

Collector power dissipation

RN2101CT to 2106CT

Junction temperature

150

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-10

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN2102CT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2102F	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Pur
RN2102FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General
RN2102FT	TOSHIBA	获取价格	暂无描述
RN2102MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2102MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2102MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2102MFV,L3F(T	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2103	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2103(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416
RN2103(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp

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