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RN2103FT PDF预览

RN2103FT

更新时间： 2024-09-25 21:18:31
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
3页 63K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP General Purpose Small Signal

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RN2103FT 技术参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.46其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接：COLLECTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：70JESD-30 代码：R-PDSO-F3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：0.1 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：TIN LEAD端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：200 MHz
Base Number Matches：1

RN2103FT 数据手册

 浏览型号RN2103FT的Datasheet PDF文件第2页浏览型号RN2103FT的Datasheet PDF文件第3页 
RN2101FT~RN2106FT  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN2101FT, RN2102FT, RN2103FT  
RN2104FT, RN2105FT, RN2106FT  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications.  
•
•
High-density mount is possible because of devices housed in very thin  
TESM packages.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more compact  
equipment and save assembly cost.  
•
•
Wide range of resistor values are available to use in various circuit  
designs.  
Complementary to RN1101FT~1106FT  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2101FT  
RN2102FT  
RN2103FT  
RN2104FT  
RN2105FT  
RN2106FT  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
47  
E
2.2  
4.7  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
−50  
−50  
−10  
−5  
V
V
CBO  
CEO  
RN2101FT~2106FT  
Collector-emitter voltage  
RN2101FT~2104FT  
Emitter-base voltage  
V
V
EBO  
RN2105FT, RN2106FT  
Collector current  
I
−100  
100  
150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note)  
C
T
RN2101FT~2106FT  
j
T
−55~150  
°C  
stg  
Note: Total rating  
000707EAA2  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general  
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the  
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and  
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or  
damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the  
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling  
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal  
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are  
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or  
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy  
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control  
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document  
shall be made at the customer’s own risk.  
2000-12-25 1/3  
123

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