RN2102FT

更新时间： 2024-09-24 13:12:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
7页	258K
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中文翻译

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数据手册

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RN2102FT 数据手册

RN2101~RN2106

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101,RN2102,RN2103

RN2104,RN2105,RN2106

Switching, Inverter Circuit, Interface Circuit

Unit: mm

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1101~RN1106

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101

RN2102

RN2103

RN2104

RN2105

RN2106

4.7

2.2

4.7

JEDEC

EIAJ

―

TOSHIBA

Weight: 2.4mg

2-2H1A

Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2101~2106

Collector-emitter voltage

RN2101~2104

RN2105, 2106

−10

Emitter-base voltage

EBO

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2101~2106

150

−55~150ꢀ

°C

stg

2001-06-07

12 3 4 5 6 7

中文翻译

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