Datasheet > RN2104CT(TPL3)

RN2104CT(TPL3)

更新时间： 2024-02-06 05:45:58

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	197K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883

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中文翻译

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技术参数
数据手册

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RN2104CT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
最小直流电流增益 (hFE)：	120	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.05 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2104CT(TPL3) 数据手册

RN2101CT ~ RN2106CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101CT, RN2102CT, RN2103CT

RN2104CT, RN2105CT, RN2106CT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

Complementary to RN1101CT to RN1106CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

4.7

2.EMITTER

3.COLLECOTR

CST3

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

RN2101CT to 2106CT

Collector-emitter voltage

−20

−10

−5

CBO

CEO

RN2101CT to 2104CT

Emitter-base voltage

EBO

RN2105CT, 2106CT

Collector current

−50

°C

Collector power dissipation

RN2101CT to 2106CT

Junction temperature

150

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-10

2014-03-01

12 3 4 5 6 7 8

中文翻译

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与RN2104CT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2104F	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Pur
RN2104FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TESM, 2-1B1A, 3 PIN, BIP Genera
RN2104MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2105	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2105(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN2105(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp
RN2105,LF(CT	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN2105ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2105CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2105CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883

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