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RN1705(T5LHLS,F) PDF预览

RN1705(T5LHLS,F)

更新时间: 2024-11-01 20:38:43
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 462K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

RN1705(T5LHLS,F) 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G5
Reach Compliance Code:unknown风险等级:5.75
其他特性:BUILT IN BIAS RESISTANCE RATIO IS 21.36最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G5
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN1705(T5LHLS,F) 数据手册

 浏览型号RN1705(T5LHLS,F)的Datasheet PDF文件第2页浏览型号RN1705(T5LHLS,F)的Datasheet PDF文件第3页浏览型号RN1705(T5LHLS,F)的Datasheet PDF文件第4页浏览型号RN1705(T5LHLS,F)的Datasheet PDF文件第5页浏览型号RN1705(T5LHLS,F)的Datasheet PDF文件第6页浏览型号RN1705(T5LHLS,F)的Datasheet PDF文件第7页 
RN1701~RN1706  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1701, RN1702, RN1703  
RN1704, RN1705, RN1706  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in USV (ultra super mini type with 5 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2701 to RN2706  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1701  
RN1702  
RN1703  
RN1704  
RN1705  
RN1706  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
USV  
22  
47  
JEDEC  
JEITA  
2.2  
4.7  
TOSHIBA  
2-2L1A  
Weight: 6.2mg (typ.)  
Equivalent Circuit (Top View)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1701 to 1706  
Collector-emitter voltage  
RN1701 to 1704  
RN1705, 1706  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
200  
RN1701 to 1706  
T
150  
j
T
stg  
55 to150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Total rating  
Start of commercial production  
1992-01  
1
2014-03-01  

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