Datasheet > RN1704JE

RN1704JE

更新时间： 2024-10-31 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
8页	550K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RN1704JE 数据手册

RN1701JE~RN1706JE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN1701JE,RN1702JE,RN1703JE

RN1704JE,RN1705JE,RN1706JE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (5 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

A wide range of resistor values is available for use in various circuit

designs.

Complementary to RN2701JE~RN2706JE

1.BASE1

2.EMITTER

3.BASE2

4.COLLECTOR2

5.COLLECTOR1

(B1)

(E)

(B2)

(C2)

(C1)

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1701JE

RN1702JE

RN1703JE

RN1704JE

RN1705JE

RN1706JE

4.7

JEDEC

JEITA

―

TOSHIBA

2-2P1D

2.2

4.7

Weight: 0.003 g (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1701JE~

1706JE

Collector-emitter voltage

RN1701JE~

1704JE

Emitter-base voltage

EBO

RN1705JE,

RN1706JE

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN1701JE~

1706JE

150

−55~150

°C

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN1704JE相关器件

型号	品牌	获取价格	描述	数据表
RN1704JE(TE85L)	TOSHIBA	获取价格	RN1704JE(TE85L)
RN1705	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1705(T5LHLS,F)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
RN1705(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, USV, 2-2L1A, 5 PIN,
RN1705(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353
RN1705,LF	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1705JE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1705JE(TE85L)	TOSHIBA	获取价格	RN1705JE(TE85L)
RN1705JE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR
RN1705JE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-353VAR

与RN1704JE相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

20
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

21
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

53

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1704JE

RN1704JE 数据手册

与RN1704JE相关器件

与RN1704JE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1704JE

RN1704JE 数据手册

与RN1704JE相关器件

与RN1704JE相关文章

您还可以找

您在本页遇到什么问题？