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RN1303(T5LHLS,F) PDF预览

RN1303(T5LHLS,F)

更新时间： 2024-01-30 04:39:45
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 459K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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RN1303(T5LHLS,F) 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：unknown风险等级：5.78
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：70JESD-30 代码：R-PDSO-G3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

RN1303(T5LHLS,F) 数据手册

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RN1301~RN1306  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1301, RN1302, RN1303  
RN1304, RN1305, RN1306  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z With built-in bias resistors.  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN2301 to RN2306  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN1301  
RN1302  
RN1303  
RN1304  
RN1305  
RN1306  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
USM  
47  
JEDEC  
―
2.2  
4.7  
JEITA  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 6 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1301 to 1306  
Collector-emitter voltage  
RN1301 to 1304  
RN1305, 1306  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
100  
150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1301 to 1306  
T
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
1987-09  
1
2014-03-01  
1234567

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