Datasheet > RN1306LF(T

RN1306LF(T

更新时间： 2024-11-28 07:42:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	459K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN1306LF(T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.83

RN1306LF(T 数据手册

RN1301~RN1306

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1301, RN1302, RN1303

RN1304, RN1305, RN1306

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2301 to RN2306

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1301

RN1302

RN1303

RN1304

RN1305

RN1306

4.7

USM

JEDEC

―

2.2

4.7

JEITA

SC-70

2-2E1A

TOSHIBA

Weight: 6 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1301 to 1306

Collector-emitter voltage

RN1301 to 1304

RN1305, 1306

Emitter-base voltage

EBO

Collector current

100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1301 to 1306

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1987-09

2014-03-01

12 3 4 5 6 7

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