Datasheet > RN1306TE85LF

RN1306TE85LF

更新时间： 2024-11-28 01:14:59

品牌	Logo	应用领域
东芝 - TOSHIBA		PC
页数	文件大小	规格书
8页	462K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

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数据手册

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RN1306TE85LF 数据手册

RN1301~RN1306

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1301,RN1302,RN1303

RN1304,RN1305,RN1306

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2301 to RN2306

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1301

RN1302

RN1303

RN1304

RN1305

RN1306

4.7

USM

2.2

4.7

JEDEC

―

JEITA

SC-70

TOSHIBA

Weight: 6 mg (typ.)

2-2E1A

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1301 to 1306

Collector-emitter voltage

RN1301 to 1304

RN1305, 1306

Emitter-base voltage

EBO

Collector current

100

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1301 to 1306

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-04-06

12 3 4 5 6 7 8

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