Datasheet > RN1309(TE85L,F)

RN1309(TE85L,F)

更新时间： 2024-01-06 04:47:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	274K
描述
TRANSISTOR NPN 50V 0.1A SC-70

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技术参数
数据手册

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RN1309(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Factory Lead Time：	16 weeks
风险等级：	5.76	Base Number Matches：	1

RN1309(TE85L,F) 数据手册

RN1307

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1307, RN1308, RN1309

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2307 to RN2309

Equivalent Circuit and Bias Resistor Values

USM

Type No.

R1 (kΩ)

R2 (kΩ)

RN1307

RN1308

RN1309

JEDEC

―

JEITA

SC-70

TOSHIBA

2-2E1A

Weight: 0.006g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

Collector-emitter voltage

RN1307

RN1308

RN1309

Emitter-base voltage

EBO

100

150

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1988-04

2014-03-01

12 3 4 5 6

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