Datasheet > RM900DB-90S

RM900DB-90S

更新时间： 2024-11-06 06:08:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		二极管开关高压高功率电源
页数	文件大小	规格书
4页	74K
描述
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

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RM900DB-90S 技术参数

MITSUBISHI HIGH VOLTAGE DIODE MODULE

RM900DB-90S

HIGH POWER SWITCHING USE

INSULATED TYPE

High Voltage Diode Module

RM900DB-90S

● IF ...................................................................900A

● VRRM ...................................................... 4500V

● Insulated Type

● 2-element in a Pack

● Copper Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

130

57 ^0.25

4-M8 NUTS

29.5

>PPS<

K1 (C)

K2 (C)

A1 (E)

A2 (E)

CIRCUIT DIAGRAM

6-φ7 MOUNTING HOLES

61.5

Screwing depth

min. 16.5

High Voltage Diode Module

May 2009

12 3 4

中文翻译

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型号	品牌	获取价格	描述	数据表
RM900HC-90S	MITSUBISHI	获取价格	HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
RM9026A	REACTOR	获取价格	High voltage linear 120/220V 10W full voltage bulb lamp solution
RM9026A_10W	REACTOR	获取价格	High voltage linear 120/220V 10W full voltage bulb lamp solution
RM9026A_50W	REACTOR	获取价格	High voltage linear 120/220V 50W full voltage flood light solution
RM9032A	REACTOR	获取价格	120V 10W thyristor dimming without stroboscopic scheme
RM9033C	REACTOR	获取价格	120V 10W thyristor dimming without stroboscopic scheme
RM90N100DF	RECTRON	获取价格	Vdss (V) : 100 V;Id @ 25C (A) : 90.0 A;Rds-on (typ) (mOhms) : 7.7 mOhms;Total Gate Charge
RM90N120DF	RECTRON	获取价格	Vdss (V) : 120 V;Id @ 25C (A) : 90 A;Rds-on (typ) (mOhms) : 6.0 mOhms;Total Gate Charge (n
RM90N30LD	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 90 A;Rds-on (typ) (mOhms) : 4.1 mOhms;Total Gate Charge (nQ
RM90N30LDV	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 90 A;Rds-on (typ) (mOhms) : 4.1 mOhms;Total Gate Charge (nQ