Datasheet > RM90N40LD

RM90N40LD

更新时间： 2024-06-27 12:12:57

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	870K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 90 A;Rds-on (typ) (mOhms) : 4.2 mOhms;Total Gate Charge (nQ) typ : 57 nQ;Maximum Power Dissipation (W) : 77 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 3042 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-252(D-PAK)

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RM90N40LD 数据手册

RM90N40LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM90N40LDuses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

Schematic diagram

40V,90A

RDS(ON)<5.5mΩ@VGs=10V

RDS(ON）<10mΩ@VGs=4.5V

Lead fell and Green Device Available

Excellent Rds(on) and Low Gate

Charge Lead free Product is acquiredcc

Applic ation

Load Switch

PWM Application

Power management

H alogen-free

RM90N40LD

90N40

2021-0

2/59

REV:O

12 3 4 5 6 7

中文翻译

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