Datasheet > RM90N30LD

RM90N30LD

更新时间： 2024-11-21 18:09:55

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	416K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 90 A;Rds-on (typ) (mOhms) : 4.1 mOhms;Total Gate Charge (nQ) typ : 60 nQ;Maximum Power Dissipation (W) : 105 W;Vgs(th) (typ) : 1.7 V;Input Capacitance (Ciss) : 3433 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM90N30LD 数据手册

RM90N30LD

N-Channel Enhancement Mode Power MOSFET

Description

The RM90N30LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=90A

R_DS(ON)=4.1mΩ (typical) @ V_GS=10V

R_DS(ON)=5.9mΩ (typical) @ V_GS=4.5V

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ DC/DC converters

ƽ Synchronous Rectifier

Halogen-free

TO-252-2L top view

100% UIS TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

90N30

RM90N30LD

TO-252-2L

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

63.6

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

200

Maximum Power Dissipation

105

P_D

Derating factor

Single pulse avalanche energy^{(Note 5)}

0.7

W/ć

E_AS

380

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2022-12/15

REV:B

12 3 4 5 6 7

中文翻译

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