Datasheet > RM85P40DF

RM85P40DF

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1866K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 85 A;Rds-on (typ) (mOhms) : 4.3 mOhms;Total Gate Charge (nQ) typ : 118 nQ;Maximum Power Dissipation (W) : 70 W;Vgs(th) (typ) : 1.7 V;Input Capacitance (Ciss) : 6638 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6

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中文翻译

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数据手册

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RM85P40DF 数据手册

RM85P40DF

P-Channel Enhancement Mosfet

Features

⚫ -40V, -85A

R_{DS ON}_）<5.3mΩ＠V_GS=-10V TYP:4.3mΩ

（

R_{DS ON}_）<7.6mΩ＠V_GS=-4.5V TYP:5.9mΩ

（

⚫ Advanced Trench Technology

⚫ High Power and current handing capability

⚫ Lead free product is acquired

Schematic Diagram

Applications

⚫ Load Switch

⚫ PWM Application

⚫ Power management

⚫ Halogen-free

DFN5X6

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

85P40

RM85P40DF

DFN5X6

13inch

5000

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-85

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Pulsed Drain Current ⁽¹⁾

I_D

-60

I_DM

-340

576

Single Pulsed Avalanche Energy ⁽²⁾

E_AS

P_D

Drain Power Dissipation

Thermal Resistance from Junction to Case⁽²⁾

Thermal Resistance from Junction to Ambient

Junction Temperature

R_θJC

R_θJA

T_J

2.15

℃/W

℃

Storage Temperature

T_STG

℃

2024-01/59

REV:O

12 3 4 5 6 7

中文翻译

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