Datasheet > RM86N150DF

RM86N150DF

更新时间： 2024-06-27 12:12:13

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	222K
描述
Vdss (V) : 150 V;Id @ 25C (A) : 86 A;Rds-on (typ) (mOhms) : 7.9 mOhms;Total Gate Charge (nQ) typ : 52 nQ;Maximum Power Dissipation (W) : 139 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 4362 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM86N150DF 数据手册

RM86N150DF

N-Channel Enhancement Mode Power MOSFET

Description

The RM86N150DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Feature

ƽ V_DS=150V,I_D=86A

R_DS(ON)< 8.8mΩ @ V_GS=10V (Typ:7.9mΩ)

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

Schematic Diagram

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

Top View

Bottom View

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

86NF

RM86N150DF

DFN5X6-8L

ꢀ

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±±0

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

350

139

3±0

I_DM

P_D

Maximum Power Dissipation

Single pulse avalanche energy^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

R_θJC

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note ±)}

0.9

ć/W

±0±0-05/69

REV:O

12 3 4 5 6 7

中文翻译

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