Datasheet > RM8A5P60S8

RM8A5P60S8

更新时间： 2024-06-27 12:12:38

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	558K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 8.5 A;Rds-on (typ) (mOhms) : 30 mOhms;Total Gate Charge (nQ) typ : 43.8 nQ;Maximum Power Dissipation (W) : 4.1 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 2595 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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中文翻译

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数据手册

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RM8A5P60S8 数据手册

ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ

50ꢁ$ꢂ3ꢃꢄ6ꢁ

ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ

ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ ꢉ

ꢀ

60V P-Channel MOSFETs

General Description

BVDSS

-60V

Features

RDSON

These P-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

-8.5A

30m:

^z-60V,-8.5A, RDS(ON) =30mȍ#9*6ꢀ ꢀ-10V

z Fast switching

z Green Device Available

z Suit for -4.5V Gate Drive Applications

Applications

SOP8 Pin Configuration

z POL Applications

z Load Switch

z LED Application

Absolute Maximum Ratings Tc=25ĳ unless otherwise noted

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-60

s20

Gate-Source Voltage

-8.5

Drain Current ± Continuous (T_C=25ɵ)

Drain Current ± Continuous (T_C=100ɵ)

Drain Current ± Pulsed¹

I_D

-5.4

I_DM

P_D

-34

4.1

Power Dissipation (T_C=25ɵ)

0.033

-55 to 150

Power Dissipation ± Derate above 25ɵ

Storage Temperature Range

W/ɵ

T_STG

T_J

Operating Junction Temperature Range

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

ɵ/W

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

---

șJC

șJA

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5(9ꢈ2

12 3 4 5 6 7

中文翻译

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