Datasheet > RM65N40D3V

RM65N40D3V

更新时间： 2024-10-31 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	986K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 65 A;Rds-on (typ) (mOhms) : 5 mOhms;Total Gate Charge (nQ) typ : 56

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中文翻译

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数据手册

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RM65N40D3V 数据手册

ꢀ ꢀ

RM65N40D3V

N-ChannelEnhancement Mode Power MOSFET

Feature

ꢀ 40V,65A

R_DS

_˅ꢀ5.9m¡˜V_GS=10V

_˅ꢀ10m¡˜V_GS=4.5V

ꢀ Advanced Trench Technology

ꢀ Lead free product is acquired

Schematic diagram

ꢀ Excellent R _DS

and Low Gate Charge

Application

ꢀ PWM applications

ꢀ Load Switch

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ Power management

ꢀ P/N suffix V means AEC-Q101 qualified, e.g:RM65N40D3V

ꢀ Halogen-free

PDFN3X3-8L

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

65N40

RM65N40D3V

PDFN3X3-8L

13 inch

5000

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T_a=25ć)

Continuous Drain Current (T_a=100ć)

Pulsed Drain Currenr ⁽¹⁾

I_D

I_DM

260

Singel Pulsed Avalanche Energy ⁽²⁾

E_AS

P_D

Power Dissipation

Thermal Resistance from Junction to Ambient⁽⁴⁾

R_θJA

R_θJC

T_J

ć/W

(4)

Thermal Resistance from Junction to Case

1.42

150

-55~ +150

Junction Temperature

Storage Temperature

T_STG

2023

-04/59

REV:O

ꢀ

12 3 4 5 6 7

中文翻译

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