Datasheet > RM66N200T2

RM66N200T2

更新时间： 2024-11-20 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	477K
描述
Vdss (V) : 200 V;Id @ 25C (A) : 66 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ) typ : 105 nQ;Maximum Power Dissipation (W) : 265 W;Vgs(th) (typ) : 3.7 V;Input Capacitance (Ciss) : 5051 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RM66N200T2 数据手册

RM66N200T2

N-Channel Trench MOSFET

Symbol

General Features

V_DSı200V

̰32mಳ@V_GS=10V

R _DS(ON)

Reliable and Rugged

100% Avalanche Tested

Lead-Free and Green Devices Available

Application

Power Switching application

Uninterruptible Power Supply

Halogen-free

Simplified Outline TO-220

Package Marking and Ordering Information

Reel Size

Tape width

Device

RM66N200T2

Device Package

Quantity

Device Marking

TO-220

66N200

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Symbol

V_DS

Parameter

Condition

Value

Unit

Drain-Source Voltage

200

T_C=25ć

T_C=70ć

I_D

Continuous Drain Current

V_GS

I_DM

P_D

Gate-Source Voltage

T_C=25ć

Pulsed Drain Current

250

Total Power Dissipation

265

EAS

T_STG

T_J

Single Pulse Avalanche Energy

Storage Temperature Range

Operating Junction Temperature

580

-55 to 175

175

2023-01/119

REV:O

12 3 4 5

中文翻译

下载PDF

与RM66N200T2相关器件

型号	品牌	获取价格	描述	数据表
RM680K	ETC	获取价格	R. F. Molded Chokes
RM681K	ETC	获取价格	R. F. Molded Chokes
RM699BV-3011-85-1005	ALTECH	获取价格	Power/Signal Relay,
RM699BV-3011-85-1012	ALTECH	获取价格	Power/Signal Relay,
RM699BV-3011-85-1024	ALTECH	获取价格	Power/Signal Relay,
RM699BV-3011-85-1060	ALTECH	获取价格	Power/Signal Relay,
RM699BV-3211-85-1012	ALTECH	获取价格	Power/Signal Relay,
RM699BV-3211-85-1060	ALTECH	获取价格	Power/Signal Relay,
RM6A	YUXIANG	获取价格	RM CORES
RM6A2N250LD	RECTRON	获取价格	Vdss (V) : 250 V;Id @ 25C (A) : 6.2 A;Rds-on (typ) (mOhms) : 430 mOhms;Total Gate Charge (