Datasheet > RM66N200T2

RM66N200T2

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	477K
描述
Vdss (V) : 200 V;Id @ 25C (A) : 66 A;Rds-on (typ) (mOhms) : 28 mOhms;Total Gate Charge (nQ) typ : 105 nQ;Maximum Power Dissipation (W) : 265 W;Vgs(th) (typ) : 3.7 V;Input Capacitance (Ciss) : 5051 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM66N200T2 数据手册

RM66N200T2

N-Channel Trench MOSFET

Symbol

General Features

V_DSı200V

̰32mಳ@V_GS=10V

R _DS(ON)

Reliable and Rugged

100% Avalanche Tested

Lead-Free and Green Devices Available

Application

Power Switching application

Uninterruptible Power Supply

Halogen-free

Simplified Outline TO-220

Package Marking and Ordering Information

Reel Size

Tape width

Device

RM66N200T2

Device Package

Quantity

Device Marking

TO-220

66N200

Absolute Maximum Ratings (T_C=25 unless otherwise noted)

Symbol

V_DS

Parameter

Condition

Value

Unit

Drain-Source Voltage

200

T_C=25ć

T_C=70ć

I_D

Continuous Drain Current

V_GS

I_DM

P_D

Gate-Source Voltage

T_C=25ć

Pulsed Drain Current

250

Total Power Dissipation

265

EAS

T_STG

T_J

Single Pulse Avalanche Energy

Storage Temperature Range

Operating Junction Temperature

580

-55 to 175

175

2023-01/119

REV:O

12 3 4 5

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