Datasheet > RM6602

RM6602

更新时间： 2024-10-31 18:09:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
12页	350K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 36 mOhms;Total Gate Charge (nQ) typ : 5 nQ;Maximum Power Dissipation (W) : 1.2 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 210 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TSOT23-6L

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技术参数
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RM6602 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

RM6602 数据手册

RM6602

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM6602 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge. This device is suitable for

use as a Battery protection or in other Switching application.

General Features

ƽ N-Channel

N-channel

P-channel

Schematic diagram

ƽ V_DS= 30V,I_D= 3.5A

R_DS(ON)<58mꢀ @ V_GS=10V

R_DS(ON)< 95mꢀ @ V_GS=4.5V

ƽ P-Channel

V_DS= -30V,I_D= -2.7A

_DS(ON)< 100mꢀ @ V_GS=-10V

_DS(ON)< 150mꢀ @ V_GS=-4.5V

Marking and pin Assignment

ƽ Low On-Resistance

ƽ Low Input Capacitance

ƽ Fast Switching Speed

ƽ Low Input/Output Leakage

Halogen-free

TSOT23-6L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Ø180mm

Tape width

Quantity

3000units

6602

RM6602

TSOT23-6L

8mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

3.5

-30

V_GS

T_A=25ć

T_A=70ć

-2.7

-2.1

-15

Continuous Drain Current

I_D

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

T_A=25ć

1.2

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^(Note2)

R_ꢁJA

N-Ch

P-Ch

104

ć/W

2018-06/15

REV:O

12 3 4 5 6 7...12

中文翻译

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