Datasheet > RM6A5N30S6

RM6A5N30S6

更新时间： 2024-10-15 18:09:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	311K
描述
Vdss (V) : 32 V;Id @ 25C (A) : 6.5 A;Rds-on (typ) (mOhms) : 27 mOhms;Total Gate Charge (nQ) typ : 2.8 nQ;Maximum Power Dissipation (W) : 2.7 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 325 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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RM6A5N30S6 数据手册

RM6A5N30S6

N-Channel Enhancement Mode Power MOSFET

Description

The RM6A5N30S6 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

V_DS=32V,I_D=6.5A

R_DS(ON)

_GS=10V

_GS=4.5V

Schematic diagram

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current

Application

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

Halogen-free

SOT-23-6 top view

P/N suffix V means AEC-Q101 qualified, e.g:RM6A5N30S6V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

6A5N30

RM6A5N30S6

SOT-23-6

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous

Drain Current-Continuous(T_C=70

Pulsed Drain Current

6.5

5.1

I_D

I_D(70

)

I_DM

P_D

Maximum Power Dissipation

2.7

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

2019-04/93

REV:O

12 3 4 5 6 7 8

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