Datasheet > RM6A5P30S8

RM6A5P30S8

更新时间： 2024-06-27 12:12:05

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	233K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 6.5 A;Total Gate Charge (nQ) typ : 12.6 nQ;Maximum Power Dissipation (W) : 1.5 W;Input Capacitance (Ciss) : 1345 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM6A5P30S8 数据手册

RM6A5P30S8

P-Channel Enhancement Mode Power MOSFET

Description

The RM6A5P30S8 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

V_DS= -30V,I_D= -6.5A

R_DS(ON)<42mΩ @ V _GS=-4.5V

R_DS(ON)< 25mΩ @ V_GS=-10V

High Power and current handing capability

Lead free product is acquired

Surface mount package

Schematic diagram and pin assignment

Application

PWM applications

Load switch

Power management

Halogen-free

SOP-8 top view

P/N suffix V means AEC-Q101 qualified, e.g:RM6A5P30S8V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

6A5P30

RM6A5P30S8

SOP-8

Ø330mm

12mm

4000 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

-6.5

-26

Drain Current-Pulsed ^{(Note 1)}

I_DM

Maximum Power Dissipation

1.5

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

Electrical Characteristics (T_A=25 unless otherwise noted)

Parameter Symbol Condition

Min Typ Max

Unit

Off Characteristics

2019-05/83

REV:O

12 3 4 5 6

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