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RM3A PDF预览

RM3A

更新时间: 2024-11-18 09:46:55
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 43K
描述
SILICON RECTIFIER DIODES

RM3A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.73Is Samacsys:N
Base Number Matches:1

RM3A 数据手册

 浏览型号RM3A的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
RM3 - RM3B  
DO - 201AD  
PRV : 400 - 800 Volts  
Io : 2.5 Ampere  
FEATURES :  
* High current capability  
* High surge current capability  
* High reliability  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
0.19 (4.83)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.375 (9.53)  
0.285 (7.24)  
MECHANICAL DATA :  
1.00 (25.4)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.052 (1.32)  
MIN.  
0.048 (1.22)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.21 grams  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
Maximum Reverse Voltage  
SYMBOL  
VRM  
RM3  
400  
RM3A  
600  
RM3B  
800  
UNIT  
V
V
A
Maximum Peak Reverse Surge Voltage  
Maximum Average Forward Current  
VRSM  
400  
600  
800  
IF(AV)  
2.5  
Maximum Peak Forward Surge Current  
Half-cycle Sine wave, 50 Hz, Single Shot  
IFSM  
150  
A
Maximum Forward Voltage at IF = 2.5 A  
VF  
IR  
0.95  
10  
V
Maximum Reverse Current  
at VR = VRmax.  
Ta = 25 °C  
Ta = 150 °C  
mA  
mA  
°C  
°C  
IR(H)  
TJ  
100  
Junction Temperature Range  
Storage Temperature Range  
- 40 to + 150  
- 40 to + 150  
TSTG  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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