Datasheet > RM3C20S6 (N)

RM3C20S6 (N)

更新时间： 2024-11-19 18:06:23

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	814K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 3.8 A;Rds-on (typ) (mOhms) : 40 mOhms;Total Gate Charge (nQ) typ : 5.8 nQ;Maximum Power Dissipation (W) : 1.25 W;Vgs(th) (typ) : 0.6 V;Input Capacitance (Ciss) : 315 pF;Polarity : Dual;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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中文翻译

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数据手册

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RM3C20S6 (N) 数据手册

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20V N+P Dual Channel MOSFETs

General Description

BVDSS

20V

RDSON

These N+P dual Channel enhancement mode power

field effect transistors are using trench DMOS

technology. This advanced technology has been

especially tailored to minimize on-state resistance,

provide superior switching performance, and withstand

high energy pulse in the avalanche and commutation

mode. These devices are well suited for high efficiency

fast switching applications.

3.8A

40m:

-20V

-2.5A

100m:

Features

z Fast switching

z Green Device Available

z Suit for 1.8V Gate Drive Applications

SOT23-6 Dual Pin Configuration

Applications

z Notebook

z Load Switch

z Networking

z Hand-held Instruments

Absolute Maximum Ratings Tc=25ɗ unless otherwise noted

Symbol

Parameter

(P)

-20

Units

(N)

Rating

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

f10

Drain Current ± Continuous (T_C=25đ)

Drain Current ± Continuous (T_C=100đ)

Drain Current ± Pulsed¹

3.8

-2.5

-1.5

-10

I_D

2.3

I_DM

P_D

15.2

Power Dissipation (T_C=25đ)

1.25

0.01

Power Dissipation ± Derate above 25đ

Storage Temperature Range

W/đ

0.01

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Thermal Characteristics

Symbol

Parameter

Thermal Resistance Junction to ambient

Typ.

Max.

Unit

șJA

---

100

đ/W

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中文翻译

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