Datasheet > RM3N700S4

RM3N700S4

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	147K
描述
Vdss (V) : 700 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 1300 mOhms;Total Gate Charge (nQ) typ : 7 nQ;Maximum Power Dissipation (W) : 6.2 W;Input Capacitance (Ciss) : 225 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-223

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RM3N700S4 数据手册

RM3N700S4

N-Channel Super Junction Power MOSFETꢀċꢀ

General Description

The series of devices use advanced trench gate super

junction technology and design to provide excellent R^DS(ON)

with low gate charge. This super junction MOSFET fits the

industry’s AC-DC SMPS requirements for PFC, AC/DC

power conversion, and industrial power applications.

V_DS

700

1500

mΩ

ꢀ

R_DS(ON)TYP.

ꢀ

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅ꢀ

Schematic diagram

Halogen-free

PackageꢀMarkingꢀAndꢀOrderingꢀInformation

Device

Device Package

Markingꢀ

RM3N700S4

SOT-223-2L

3N700

SOTꢁ223ꢁ2Lꢀ

Absolute Maximum Ratings T_C25ºC, unless otherwise noted

Parameter

Symbol

Value

700

Unit

Drain-Source Voltage (V_GS0V)

V_DSS

T_C25ºC

Continuous Drain Current

I_D

TC 100ºC

1.8

Pulsed Drain Current

(note1)

I_DM

V_GSS

E_AS

Gate-Source Voltage

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

(note2)

E_AR

0.10

2019-09/96

REV:O

12 3 4 5 6 7 8

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