Datasheet > RM3A6N30S2

RM3A6N30S2

更新时间： 2024-06-27 12:12:33

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	166K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 3.6 A;Rds-on (typ) (mOhms) : 58 mOhms;Total Gate Charge (nQ) typ : 4.0 nQ;Maximum Power Dissipation (W) : 1.7 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 230 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM3A6N30S2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

RM3A6N30S2 数据手册

RM3A6N30S2

Enhancement Mode Power MOSFET

N-Channel

Description

The RM3A6N30S2 uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge .This device is suitable

for use as a load switch or in PWM applications.

General Features

ƽ V_DS= 30V,I_D= 3.6A

Schematic diagram

R_DS(ON)< 73mΩ @ V_GS=4.5V

R_DS(ON)<58mΩ @ V_GS=10V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin assignment

SOT-23 top view

Application

ƽ Battery protection

ƽ Load switch

ƽ Power management

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2304

RM3A6N30S2

SOT-23

Ø180mmꢀ

8 mm

3000 unitsꢀ

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

3.6

Drain Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

1.7

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

73.5

ć/W

Electrical Characteristics (T_A=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

μA

2016-07

REV:O15

12 3 4 5 6 7

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