Datasheet > RJP1CS07DWA-80

RJP1CS07DWA-80

更新时间： 2022-02-26 11:09:00

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	116K
描述
Inverter

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数据手册

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RJP1CS07DWA-80 数据手册

RJP1CS07DWA / RJP1CS07DWS

Preliminary

Electrical Characteristics (Datas below are measured values on a package configuration.)

(Tc = 25°C unless otherwise noted)

Item

Symbol

I_CES

Min

—

5.0

—

Typ

—

Max

Unit

Test Conditions

V_CE= 1250 V, V_GE= 0

V_GE= ±30 V, V_CE= 0

V_CE= 10 V, I_C= 5mA

I_C= 150 A, V_GE= 15 V ^Note2

V_CE= 25 V

Zero gate voltage collector current

Gate to emitter leak current

Gate to emitter cutoff voltage

Collector to emitter saturation voltage

Input capacitance

A

I_GES

—

±1

6.8

2.25

—

V_GE(off)

V_CE(sat)

Cies

Coes

Cres

—

1.80

15.0

0.43

0.35

895

140

490

100

nC

V_GE= 0

Output capacitance

—

f = 1 MHz

Reveres transfer capacitance

Total gate charge

—

V_GE= 15 V

V_CE= 600 V

Gate to emitter charge

Qge

Qgc

t_d(on)

t_r

—

I_C= 150 A

Gate to collector charge

Switching time ^Note3

—

V_CC= 600 V

I_C= 150 A

—

V_GE= ±15 V

t_d(off)

t_f

600

150

—

Rg = 10 , Tc = 150 C

Inductive load

—

Short circuit withstand time ^Note4

Notes: 2. Pulse test.

t_sc

—

s

V_CC 720 V , V_GE= 15 V

Tc = 150 C

3. Switching time test circuit and waveform are shown below.

4. Verified by design.

Switching Time Test Circuit

Waveform

90%

V_GE

Diode clamp

10%

V_CC

I_C

90%

D.U.T

10%

t_f

10%

t_r

t_d(off)

t_d(on)

R07DS0830EJ0400 R07DS0830EJ0400 Rev.4.00

Sep 30, 2015

Page 2 of 3

123 4

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