Datasheet > RJJ0601JPE

RJJ0601JPE

更新时间： 2024-11-21 06:07:59

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	123K
描述
Silicon P Channel MOS FET High Speed Power Switching

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RJJ0601JPE 数据手册

RJJ0601JPE

Silicon P Channel MOS FET

High Speed Power Switching

REJ03G1603-0100

Rev.1.00

Nov 21, 2007

Features

•

Low on-resistance

_DS(on)= 8.2 mΩ typ.

•

Capable of 4.5 V gate drive

High speed switching

Outline

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

Value

–60

Unit

V_DSS

V_GSS

±20

I_D

I_D(pulse) ^Note

I_DR

–90

Drain peak current

–360

–90

Body-drain diode reverse drain current

Avalanche current

Note

I_AP

–40

Note

Avalanche energy

E_AR

137

°C

Channel dissipation

Pch^Note

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Thermal Impedance Characteristics

•

Channel to case thermal impedance θch-c: 1.39°C/W

REJ03G1603-0100 Rev.1.00 Nov 21, 2007

Page 1 of 6

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