Datasheet > RJK005N03

RJK005N03

更新时间： 2024-11-21 03:36:51

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
3页	60K
描述
2.5V Drive Nch MOS FET

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中文翻译

获取价格

数据手册

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RJK005N03 数据手册

RJK005N03

Transistors

2.5V Drive Nch MOS FET

RJK005N03

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

SMT3

2.9

1.1

0.8

0.4

zFeatures

( )

1) Low On-resistance.

2) Low voltage drive (2.5V drive).

( )

0.95 0.95

1.9

0.15

(1)Source

(2)Gate

zApplications

Switching

Each lead has same dimensions

(3)Drain

Abbreviated symbol : KV

zPackaging specifications and h^FE

zInner circuit

(3)

Package

Taping

Type

Code

T146

3000

Basic ordering unit (pieces)

RJK005N03

(2)

∗2

(1) Source

(2) Gate

(3) Drain

∗1

(1)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

500

Drain current

Pulsed

∗1

I_DP

I_S

2.0

Source current

(Body Diode)

Continuous

200

°C

∗1

∗2

Pulsed

I_SP

800

Total power dissipation

Channel temperature

P_D

200

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Each terminal mounted on a recommended land

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

625

Unit

∗

Channel to ambient

∗ Each terminal mounted on a recommended land

Rth(ch-a)

°C/W

1/2

12 3

中文翻译

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